p age:p2-p1 plastic-encapsulate transistors features collector-base voltage complement to c945 marking : cs maximum ratings (ta=25 unless otherwise noted) parameter symbol value unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current -continuous i c 0.15 a collector power dissipation p c 0.2 w junction temperature t j 150 storage temperature t stg -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v cbo i c = -5ua,i e =0 -60 v collector-emitter breakdown voltage v ceo i c = -1ma , i b =0 -50 v emitter-base breakdown voltage v ebo i e = -50ua, i c =0 -5 v collector cut-off current i cbo v cb = -60 v , i e =0 -0.1 ua emitter cut-off current i ebo v eb = -5 v , i c =0 -0.1 ua dc current gain h fe v ce = -6 v, i c = -1ma 120 475 collector-emitter saturation voltage v ce (sat) i c = -100ma, i b =- 10ma -0.18 -0.3 v base-emitter voltage v be(on) v ce =-6v,i c =-1.0ma -0.58 -0.62 -0.68 v transition frequency f t v ce =-6v,i c =-10ma 50 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mh z 4.5 7 pf noise figure nf v ce =-6v,i c =-0.3ma, rg=10k?,f=1 00h z 6 20 db classificationof h fe rank l h range 120-220 220-475 (pnp) 1. base 2. emitter sot-23 3. collecto A733 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
p age:p2-p2 plastic-encapsulate transistors typical characteristics A733 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
|
